Abstract
We have studied the effect of ultrasonic treatment on the generation characteristics of a silicon-silicon dioxide (Si-SiO2) interface obtained by thermal oxidation of the surface of silicon. The ultrasonic treatment leads to a decrease in the surface generation rate and an increase in the generation lifetime of minority charge carriers. These effects are related to a transformation of the defect structure of a transition layer at the Si-SiO2 interface and in the adjacent region of silicon.
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