Abstract
As the key factor for designing the valleytronic devices is to well understand the valley-dependent transport mechanism in graphene, we investigate, in this work, the effect of two ferromagnetic (FM) metal stripes on the valley polarization in a graphene nanostructure with a strain. The nearly 100% valley polarization is observed at certain energy windows and it can be easily controlled through changing the width and the position of the FM stripe as well as the strength of the magnetic field induced by the FM stripe. Our interesting findings reveal the valley-dependent transport mechanism of electrons and promote the realization of the new types of valleytronic devices modulated by the FM stripe and the strain.
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