Abstract
Tin sulfide (SnS) thin films were obtained by chemical bath deposition (CBD) using different concentrations of trisodium citrate (TSC) as a complexing agent. Nickel doping tin sulfide was carried out. The structural, electrical, chemical composition and optical properties of thin films were analyzed. The lowest resistivity (ρ = 0.42 × 105Ω cm) is observed for Ni:SnS (6 at. %) The energy band gap values with the TSC addition are found in the range 1.36 eV–1.57 eV. The results demonstrated that tin sulfide (SnS) thin films have the potential to be used for optoelectronic applications.
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