Abstract
Abstract : The growth mode of thin-film deposition must be taken into account when one assesses surface electron spectroscopy data for evidence of interdiffusion of deposited and substrate material. Three models of thin-film growth are examined for their influence on signal intensity: layer-by-layer growth and two different island-growth mechanisms. Island growth, in which islands of a fixed lateral dimension first grow to a given height and then spread to cover the surface, was found to fit available UPS (ultraviolet photoelectron spectroscopy) data on the deposition of Ag on Ge. More data, such as transmission electron micrographs verifying deposit growth mode or UPS valence band changes indicating Ag-Ge interactions, must be obtained before conclusions concerning diffusion vs. island formation can be made. (Author)
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