Abstract
The thickness-dependent strain-relaxation behavior and the associated impacts upon the magnetic, electric properties and magnetoelectric coupling effect for the highly c-axis oriented BiFeO3 (BFO) film films grown on (001) oriented Si substrate were studied. The result shown that the value of remnant polarization and coercive field were suppressed as the strain relaxes with increasing thickness. The BFO films also presented typical weak ferromagnetic hysteresis loops with a low coercive field and small remnant magnetization, and the saturated magnetization and remnant magnetization decreasing with increasing film thickness. The room temperature dynamic magnetoelectric coupling was approved by the transverse magnetoelectric voltage coefficients, which also decreased with strain relaxation due to the increase of thickness, and the maximum was around 265 mV/cm.Oe when the film thickness is 50 nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
