The effect of thermal treatment on the electrical properties of titanium nitride thin films by filtered arc plasma method

Abstract

In this work, the titanium nitride (TiN) films were prepared by filtered arc plasma (FAP) method with thickness ranging from 7 to 75 nm. The structure of TiN film was determined by X-ray diffraction (XRD). Sheet resistance ( R □) and TCR were measured by four-point probe station and TCR measurement system respectively. The results indicate that R □ and TCR of TiN films are strongly thickness-dependent. After annealed above their individual critical temperature ( T c), all films experienced huge resistance increases and color variations. While annealed below T c, most of TiN films exhibited better resistance stability and repeatability than as-deposited TiN film. For extremely thin TiN film, like 7 nm, after annealed below T c, its TCR turned from positive to negative. T c for different TiN film was found strongly thickness-dependent from 200 to 600 °C.