Abstract
The effect of post-thermal annealing after halo implantation on device characteristic and reliability of sub-100-nm CMOSFETs was investigated. We found that the control of annealing time is more efficient than that of annealing temperature with respect to improving the hot-carrier-induced degradation. The best result of device performance and reliability was obtained by a post-thermal annealing treatment performed at medium temperatures (e.g., 900/spl deg/C) for a longer time (>1 min).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Device and Materials Reliability
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
