Abstract
The article presents the research results of the thermal cycling influence on the ratio of the ultimate composition, chemical state and electrical resistance of VO2±Y system materials. It is established that for all VO2±Y system materials a phase transition semiconductor-metal (PTSM) is observed at temperature of ∼ 340 K, accompanied by a sharp change in electrical resistance both before and after thermal cycling. Despite the fact that PTMD retained after thermal cycling, the resistivity jump Δln(R/R0) at PTMD for all test materials decreases, the transition temperature becomes more diffused. It is shown that after a series of 30 thermal cycles, the ratio of the surface ultimate composition of all the materials under study changes to a decrease in the oxygen content. Minimal changes in properties as a result of thermal cycling are observed in vanadium dioxide of stoichiometric composition. According to the results of XPS spectra, it was determined that V4+ oxide predominates in the surface layer of VO2 samples, both before and after thermal cycling, and there are also small inclusions of V5+ oxide.
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