Abstract
Hydrostatic pressure is used to investigate band structure effects in double barrier resonant tunnelling devices based on n-type (AlGa)As/GaAs. The pressure-induced increase in Γ-X tunnelling and scattering reduces the space charge build-up in the quantum well at resonance and allows us to study the transition from intrinsic bistability to ordinary negative differential conductivity in the I(V) characteristics. In the limit of fast Γ-X transfer the resonant peak in I(V) is lost.
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