Abstract
Various domain structures in ferroelectric thin films with four different surface interdigital electrodes are simulated based on the time-dependent Ginzburg-Landau method. The four different electrode distributions are that (a) both surfaces are symmetrically arranged interdigital electrodes, (b) top surface is covered with interdigital electrode while bottom surface is covered with full electrode, (c) both surfaces are alternately arranged interdigital electrodes and (d) top surface is covered with interdigital electrodes while bottom is not covered with electrode. These electrode distributions could be converted to corresponding electrical boundary conditions of the phase field equations. Compared with ideal short circuit and open circuit electrical boundary conditions, there are some special domain structures (vortices, flux-closure structures and a/c domains) due to the change of depolarization electric energy and Landau energy with different surface electrodes. The domain structures in ferroelectric thin films have an obvious size effect with the surface interdigital electrodes. These results indicate we can obtain the various domain structures of ferroelectric thin films by turning different surface electrode distributions.
Highlights
Ferroelectric materials are widely used for sensors, actuators and nonvolatile memories due to their excellent ferroelectric, piezoelectric and dielectric properties
When the temperature is below the Curie temperature, ferroelectrics will convert into ferroelectric phase from paraelectric phase and form various domain structures, which can evolve and switch with the corresponding mechanical and electrical conditions.[6]
The optimal material properties could be obtained by controlling the domain structures of ferroelectric thin films
Summary
Ferroelectric materials are widely used for sensors, actuators and nonvolatile memories due to their excellent ferroelectric, piezoelectric and dielectric properties. Nowadays device miniaturization is a tendency in manufacture field, and nanostructure ferroelectrics such as ferroelectric thin films have a leading application in micro-electromechanic and micro-electronic devices such as nonvolatile ferroelectric memories[1,2,3] and microwave devices.[4,5] When the temperature is below the Curie temperature, ferroelectrics will convert into ferroelectric phase from paraelectric phase and form various domain structures, which can evolve and switch with the corresponding mechanical and electrical conditions.[6] There are many factors, such as size effects,[7,8,9,10] mechanical effects[11,12,13,14] and electrical boundary conditions,[15,16,17,18,19,20] which play crucial roles on the domain structures of the ferroelectric thin films. The physical properties are pronouncedly influenced by the domain structures of these systems. The optimal material properties could be obtained by controlling the domain structures of ferroelectric thin films
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
