Abstract
We have deposited copper electrochemically, from acidic copper sulfate solutions with and without presence of different polyether molecules, on as-received RuTa alloy substrates, electrochemically-treated RuTa alloys and on Pt. We focused on the effect of substrate properties on the nucleation and growth processes during galvanostatic deposition, especially formation of Cu underpotential layer, and its influence on the island shape and final island density. Analysis of the galvanostatic transients showed that an exponential dependence could be used to describe the relationship between the island density and the actual deposition overpotential for all three substrates. For Pt and as-received RuTa alloy, a general equation is proposed for determining final island density irrespective of solution composition and deposition parameters, making it easier to predict the potential use of the given substrates in applications where direct plating is required. We also use various physical characterization techniques to determine the point of minimum coalescence thickness for Cu on Pt as a model substrate, and extrapolate the validity of the exponential formulas to island sizes beyond the resolution of our scanning electron microscopes.
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