The Effect of the Structural‐Phase State and Diffusion Processes on Electrical Conductivity of Nanocrystalline FexCo100−x/Cu/ FexCo100−x Thin Films (0 < x < 100)

Abstract

AbstractThe complex investigation of the crystal, diffusion processes, and electrical conductivity of FexCo100−x (0 < x < 100) film alloys and FexCo100−x/Cu/FexCo100−x/Sub three‐layer films with a ferromagnetic layer thickness dF = 20–50 nm and a nonmagnetic layer thickness dN = 2–30 nm has been carried out. For both as‐deposited and annealed at 700 K films at x = 50, 80 at%, the phase composition corresponds to bcc‐FexCo100−x (single‐layer films) or bcc‐FexCo100−x + fcc‐solid solution of Fe and Co atoms that isomorphically replace each other in the Cu lattice (three‐layer film). At x = 20 at%, the phase composition of as‐deposited single‐layer films corresponds to bcc‐FexCo100−x + hcp‐Co and bcc‐FexCo100−x + fcc‐Cu + hcp‐Co in the case of three‐layer films. After heat treatment at 700 K, the phase composition corresponds to bcc‐FexCo100−x + fcc‐Co (single‐layer films) and bcc‐FexCo100−x + fcc‐s.s. Cu (Fe, Co) (three‐layer film). For three‐layer samples with dF = 30–50 nm, dN = 10–30 nm, annealing at 700 K does not lead to complete mixing of the layers, their original order is preserved. In the temperature dependence of the resistivity, three characteristic regions, where the various electron scattering mechanisms dominate, are distinguished and grounded.