The effect of the precursors and chemical vapor deposition process on the synthesis of two-dimensional molybdenum nitride nanomaterials

Abstract

Researchers have extensively investigated 2D nanomaterials of TMN owing to its superior chemical and physical characteristics and numerous potential uses. Research on the synthesis of TMNs was insufficient and remained stagnant. Here, we alter precursor types and substrates and develop three CVD procedures for synthesizing TMN. High-quality signal-crystal MoN nanoflakes were synthesized using sodium molybdate precursors. The same growth conditions directly induced the formation of Mo5N6 nanofilms on sapphire substrate. We synthesized large-area MoN nanofilms on silicon substrates by conducting a nitrogen substitution reaction on MoS2 nanofilms. MoS2 serves as the precursor for MoN nanofilms synthesis via nitridation. MoN's characteristic peak at 143.34 cm−1 was located using Raman spectroscopy. We obtained epitaxial growth of Mo5N6 nanofilms at low pressure (66 cm Hg) on a sapphire substrate. Mo5N6 nanofilms exhibited a distinctive Raman spectroscopy signal at 154.03 cm−1. In anticipation of its prospective applications, we assessed the electrical properties of Mo5N6 nanofilms. Additionally, the resistivity of Mo5N6 was found to be 1.555*10−5 Ωcm. Large-area 2D nanomaterials, such as Mo5N6, have the potential to be employed as graphene or other semimetal materials in the electronic device industry, as evidenced by the temperature dependency of the conductivity test.