The effect of the isoelectronic traps on the luminescence properties of Zn1-XCdXO thin films

Abstract

In this report, Zn1-xCdxO ceramic thin films were deposited by the sol-gel method on an n-type Si (100) substrate. The structure, morphology, and luminescence properties of the thin films were studied. To elucidate the structure and the optical properties of Zn1-xCdxO thin films, our study focuses on the roles of changing the content of the doped Cd and the annealing temperature in Cd-doped ZnO thin films. The Cd doping behavior was investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and photoluminescence (PL). The research concentrates on the effects of doping concentration, annealing temperature, and isoelectronic trapping on the crystallization quality and luminescence properties of the thin films. On the basis of the different electronegativity of the doping elements, Cd substitution for Zn forms isoelectronic traps, which influence the intensity of luminescence and change the luminous peaks. By raising the annealing temperature further, the intensity of each diffraction peak of ZnO is gradually increasing, improving the quantity of Cd entering the ZnO crystal lattice. The PL spectra display that the ZnO thin films only appear in yellow-green emission bands, which appear redshift through the incorporation of Cd. With the increase in Cd doping amount, the yellow light luminous center keeps moving in the low energy direction. When the Cd doping amount reaches 20 %, the luminescence intensity reaches its maximum, which holds great promise for its application in light devices.