Abstract
Topographic infrared and photoluminescence spectroscopy of synthetic single-crystal diamonds revealed that a higher growth rate increases the concentration of Ni and Co impurities in {111} growth sectors and of N impurities in {001} growth sectors. Also, the change in the concentration of Ni or Co in {111} growth sectors, caused by changing the rate of growth, of HPHT synthetic diamonds grown with Ni or Co catalysts is inversely related to the change of the concentration of N.
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