The effect of the gate‐drain distance on high frequency and noise performance for AlGaN/GaN HEMT

Abstract

ABSTRACTThe influence of the gate‐drain distance on high frequency and noise performance of AlGaN/GaN high electron mobility transistors (HEMT) is investigated in this article. AlGaN/GaN HEMTs with three different gate‐drain separation structures are fabricated using 0.25 μm gatelength process, and a detailed comparative study on their device performances is performed. Small signal model parameters are determined from S‐parameter on‐wafer measurement up to 40 GHz, and the noise parameters are determined up to 18 GHz based on 50 Ω noise figure on‐wafer measurement system. The variation of intrinsic small signal model parameters and noise model parameters with different gate‐drain separation is studied. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2020–2023, 2015