Abstract
In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in $n$-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an increase in the electric field strength, depending on the direction, leads to an increase or decrease of the critical temperature (the critical concentration of adatoms), at which the formation of self-organized nanostructure is possible. It is shown that in strongly alloyed $n$-GaAs semiconductor, an increase of the electric field strength leads to a monotonous change (decrease or increase depending on the direction of the electric field) of the period of self-organized surface nanostructures of adatoms.
Highlights
The possibility of obtaining semiconductor structures with self-organized nanoclusters using methods of molecular-beam epitaxy [1, 2], ion implantation [3, 4] and under the action of laser irradiation [5, 6], as well as the ability to control their physical properties, have become the subject of intense research
In [10], there was developed a theory of spontaneous nucleation of the surface nanometer lattice which is due to instability in the system of adatoms interacting with self-consisting surface acoustic wave (SAW)
Since for GaAs, the constant of the hydrostatic deformation potential of the conduction band ac < 0, an excess of electrons will be observed in those areas of the surface where adatoms are accumulated, which are the centers of stretching, and in those areas of the surface where adatoms are accumulated, which are the centers of compression, there will be a shortage of electrons in comparison with the mean value [figure 1 (a)]
Summary
The possibility of obtaining semiconductor structures with self-organized nanoclusters using methods of molecular-beam epitaxy [1, 2], ion implantation [3, 4] and under the action of laser irradiation [5, 6], as well as the ability to control their physical properties, have become the subject of intense research. In [10], there was developed a theory of spontaneous nucleation of the surface nanometer lattice which is due to instability in the system of adatoms interacting with self-consisting surface acoustic wave (SAW). It can be expected that when placing a semiconductor in the external electric field, it is possible to change the conditions of the formation of laser-induced periodic surface nanostructures and predictably control their parameters due to the interaction of the electric field with nonuniformly distributed free current carriers on the surface. The effect of the external electric field perpendicular to the SAW on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor is investigated
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