The Effect of the Elastic Fields Caused by a Networks of Dislocations Placed at Interfaces of a Three-Layer Material Cu/Cu/(001) Fe in the Case of Anisotropic Elasticity

Abstract

The importance of crystal interfaces in the assessment of the effects of elastic fields Eshelby et al. (Acta Meta 1:251–259, 1953) for nanoscale multilayer materials is a topical area that has been the focus of many researchers. This work focuses on the characterization and modeling of interfacial defects on both microscopic and macroscopic scales. From a design perspective, considering such elastic fields has become a critical element in the development of multilayer’s in the industry due to their effect on the properties of materials. The description of elastic fields associated with misfit dislocations in a multilayer involving hetero fields is possible thanks to the inversion of a single set of linear equations. Thus, the aim of this investigation is to evaluate the effects of elastic fields at the level of crystal interfaces for a nanoscale three-layer material under the effect of two-way networks of unidirectional dislocations. These are placed at interfaces accommodating a parametric mismatch which accounts for the particular anisotropic elasticity for each crystal.