Abstract
Three films of SiO2 deposited by three different methods (chemical vapor deposition, electron beam evaporation and r.f. sputtering) were studied to show the effect of the method of preparation on the optical constants of the films. Of the three studied films, the film prepared by electron beam gun deposition showed refractive index values (n) close to the bulk material in the spectral range 300–850 nm. No values for the absorption constant (k) were determined except for the film prepared by r.f. sputtering, which showed higher k values due to the non-stoichiometric structure of the film.
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