The Effect of the Chemical Composition on the Structure and Physical Properties of Chalcogenide Glassy Semiconductors of the As–Ge–Se System

Abstract

Using the methods of X-ray diffraction and density measurement (in the short- and middle-order scale), the influence of the chemical composition on the parameters of the local structure and the physical properties of chalcogenide glassy semiconductors (CGS) of the As–Ge–Se system is studied. The changes occurring in the numerical values of the correlation length and quasi-period in the middle-order region, as well as the packing coefficient, compactness, average atomic volume, and the number of constraints, are interpreted within the cluster-void model and the theory of topological constraints by the existence of the chemical percolation threshold.