Abstract
The fast development in semiconductor technology has led to increasingly higher chip power dissipation and greater non-uniformity of the heat dissipation with the result of localized hot spots, often exceeding 1 kW/cm 2 in heat flux. As was shown in previous works of the authors, thin and very thin liquid films driven by a forced gas/vapor flow (stratified or annular flows), i.e. shear-driven liquid films in a narrow channel are promising candidate for an innovative cooling technique optimizing the tradeoffs between performance and cost. The goal of the present work is to study the effect of the channel height on the critical heat flux (CHF) in a locally heated liquid film driven by the shear stress of gas in a channel.
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