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Abstract
Thermo-gravimetric analysis (TGA) was used to assess the thermal stability of a temporary adhesive. High temperature is one important factor leading to the voids formation in bonded wafers, which can degrade bonding force and cause chipping. Some heat treatment experiments were devised to investigate the influence of high temperature on the bonding quality. The prebake process before temporary bonding plays a very important role in preventing voids from forming between bonded wafers, which can be confirmed by the TGA results. A short loop evaluation was performed to assess the temporary bonding quality with different prebake and heat treatment temperatures. The results were used to optimize prebake conditions. Application to 2.5D through silicon vias temporary bonding and backside processing is demonstrated.
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