Abstract
A semiconductor device, such as an InSb transducer, can be used for pressure gradient sensing. Temperature affects local dynamic diffusion current within an InSb transducer. Parameters such as mobility and diffusion coefficients depend on scattering, and the major scattering effects are also temperature dependent. In turn, electrical responses excited by acoustically driven band gap modulation are affected. The open-circuit voltage of an indium antimonide transducer subject to acoustic resonance is amplified 0.3 percent per Kelvin by an increase in temperature. Quantum effects on carrier transport and behavior also depend on temperature, so there are temperature limits in which quantum effects are minimal. At very low temperatures, the quantum effects and wave nature of carriers can play a significant role in carrier behavior and transport.
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