Abstract
The effect of surface roughness of the Si/SiO2 interfaces on hole mobility in double gate silicon-on-insulator p-channel devices is studied. Wave functions and dispersion relationships of the hole subbands were computed self-consistently with the potential profile, employing a 6×6 k⋅p model. The roughness of both silicon-oxide interfaces was thoroughly taken into account as a scattering mechanism by extending a model previously developed for n-channel double gate devices and adapting it to the requirements of the k⋅p calculation. Hole mobility was computed using the Kubo–Greenwood formula and the impact of surface roughness was discussed. Volume inversion (mobility increase with regard to conventional bulk channel mobility in a range of silicon layer thicknesses) was observed to have a significant effect, as in n-channel devices.
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