Abstract
The adsorption of oxygen atoms during simultaneous deposition of sputtered silver atoms on a silicon target and ion irradiation (Ar +, ion energy 50–175 keV, ion flux density −10 12 cm −2 s −1) is investigated. It is shown that the amount of the adsorbed oxygen varies non-monotonically with the substrate temperature. The experimental results are considered phenomenologically including basic elementary processes, such as adsorption of residual gases, desorption, preferential sputtering, redistribution of atoms at the interface. The presence of the activated atoms on the surface generated by incident ions is assumed. It is shown that the prevailing processes determining the amount of adsorbed oxygen at the interface are the processes of activation of surface atoms and thermal desorption.
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