Abstract
We report the growth and characterization of unintentionally doped GaN on both exact and vicinal (0001) sapphire substrates. The GaN heteroepitaxial layers are grown by metalorganic chemical vapor deposition on c-plane A12O3 substrates either on-axis or intentionally misoriented 2° toward the a-plane (1120) or 5 or 9° toward the m-plane (10 10). The samples are characterized by 300K photoluminescence, cathodoluminescence, and Hall-effect measurements as well as by triple-axis x-ray diffractometry to determine the effect of the misorientation on the optical, electrical, and structural properties of heteroepitaxial undoped GaN. Ten different sample sets are studied. The data reveal enhanced photo-luminescence properties, increased electron mobility, a reduced n-type background carrier concentration, and a somewhat degraded surface morphology and crystalline quality for the misoriented samples compared to the on-axis samples.
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