Abstract
We have investigated the electron transport properties of polycrystalline Ge1−xGaxTe alloys. Ga‐incorporation in GeTe has a nonmonotonic effect on its electrical conductivity which decreases slightly at low doping levels, but significantly at high doping levels (x 0.06) due to a concomitant reduction of hole‐concentration and mobility. Plausible Ga‐doping mechanisms determining these trends have been discussed. The Seebeck coefficient of GeTe does not enhance with Ga content as much as with Sb, Bi or In content at similar hole‐concentrations. Based on the theoretical Pisarenko plots and estimated effective carrier masses in Ge1−xGaxTe alloys, the observed behavior of Seebeck coefficient is rationalized on the basis of relative orbital energies and energy difference between valence band valleys in GeTe.
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