Abstract
OPC(Optical Proximity Correction) has become an indispensable tool used in deep sub-wavelength lithograph process enabling highly accurate CD (Critical Dimension) control as design rule shrinks. Current model based OPC is a combination of optical and process model to predict lithography process. At this time, the accurate OPC model can be made by accurate empirical measurement data. Therefore empirical measurement data affects OPC model directly. In the case of gate layer, it affects to device performance significantly and CD spec is controlled tightly. Because gate layer is hanging on between active area and sti area, the gate CD is affected by different sub layer stack and step height. This paper will analyze that the effect of sub layer on the OPC model and show difference EPE value results at the patterns such as iso line, iso space,pitch, line end and T_junction between poly and gate model using constant threshold model.
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