The effect of subgrain mobility on recrystallization kinetics: phase-field simulation study

Abstract

The influence of grain boundary mobility on the recrystallization process (ReX) was investigated in this study using the phase-field approach. In accordance with the Read-Shockley equation, for the interfacial mobility as a function of the misorientation angle, the resulting microstructural evolution was studied. It was observed that the disappearance of low-angle grain boundaries (LAGBs) during the ReX process caused high-angle grain boundaries to move faster during the subsequent ReX stages. For materials with high stacking energy, such as aluminum, LAGBs were additionally found to play a significant role in the ReX process. The kinetics of the ReX process, coupled with grain growth, showed the typical behavior observed in fine-grained structures of pure aluminum.