Abstract
Optical properties of InxGa1-xAs/GaAs triple QW are studied for different quantum well thicknesses and external electric fields. The effective mass approximation is used to calculate the band alignment of the structure. The finite difference method (FDM) is applied to solve the 1D- Schrödinger equation. Intersubband energies and the total optical absorption coefficients (TOACs) and total relative refractive index changes (RRICs) are numerically calculated under the applied external electric field. The structure parameters and applied electric field cause the separation of the energy levels and variation of the dipole moment matrix elements. These separations are responsible for the resonant peak shifts. It is shown that the varied structure parameters and external electric field cause red or blue shifts in the resonant peak position of TOAC and RRIC coefficients.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
