Abstract
The aim of the presented investigations was to deposit the thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) on (100) Si substrate by using the Pulsed Laser Deposition (PLD) method. Structure was exanimated by using XRD, SEM, AFM, TEM and XPS methods. The catalytic properties were analyzed in 4 ppm acetone atmosphere. The doping of Sr thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) resulted in a decrease in the size of the crystallites, the volume of the elemental cell and change in the grain morphology. In the LaFeO3 and La0.9Sr0.1FeO3, clusters around which small grains grow are visible in the structure, while in the layer La0.8Sr0.2FeO3, the visible grains are elongated. The TEM analysis has shown that the obtained thin films had a thickness in the range 150–170 nm with triangular or flat column ends. The experiment performed in the presence of gases allowed us to conclude that the surfaces (101/020) in the triangle-shaped columns and the plane (121/200) faces in flat columns were exposed to gases. The best properties in the presence of CH3COCH3 gas were noted for LaFeO3 thin film with triangle columns ending with orientation (101/020).
Highlights
Perovskite oxides denoted as ABO3 are widely studied due to their double-type ionic and electronic conductivity
In the case of LaFeO3 and La0.9 Sr0.1 FeO3, clusters around which small grains grow are visible in the structure, while in the layer of x = 0.2 of the content of strontium, the visible grains are elongated
The change in morphology can be explained by the change in the kinetics of the layer growth as a result of doping
Summary
Perovskite oxides denoted as ABO3 are widely studied due to their double-type ionic and electronic conductivity. Perovskites are useful according to their functional properties, showing great potential in several applications such as gas sensors [1,2,3], automotive exhaust catalyst and methane reformers that produce syngas [4,5,6] or cathodes in solid oxide fuel cells (SOFCs) [7,8]. Properties of perovskite oxides result from a large number of cations which can be included in the structure such as A=La, Ca, Sr and B=Ti, Fe, Nb, Ta, Co and Mg, from possible cationic and/or anionic substitutions in this structure (vacancy) and from the creation of structural defects caused by cations or oxygen deficiency [9]. LaFeO3 is a p-type semiconductor with orthorhombic structure type Pmna (No 62) at room temperature. This perovskite is as famous antiferromagnetic materials with high
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