Abstract
Supersonic molecular beam techniques have been employed to examine the dissociative adsorption of GeH 4 and Si 2H 6 on strained Si 1− x Ge x (0≤ x≤1) epitaxial overlayers deposited on Si(100). Low-energy ion scattering spectrometry (LEISS) has been utilized to quantify in situ the topmost Ge surface composition of the Si 1− x Ge x films. Through the measurements of reaction probability we find that these ultrathin strained semiconducting overlayers, both alloy and pure component (i.e., Ge/Si(100)), exhibit enhanced gas–surface reactivity when compared to their bulk (relaxed) counterparts, reflecting the critical role played by strain in these epitaxial overlayers.
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