Abstract
The stoichiometric effect on sputtering, deuterium retention and surface damage in titanium carbide films resulting from ion bombardment is described. The etching rate increased with an increase in carbon content of the films, in the case of oxygen and deuterium ion bombardments, while it was independent of the composition around the stoichiometry in the case of argon. The deuterium retention and re-emission behaviour was very sensitive to the stoichiometry; the retention of deuterium increased with the titanium concentration. The surface damage under deuterium bombardment also depended on the stoichiometry. The formation of blisters was suppressed in films with excess titanium. These results for titanium carbide films of different compositions are explained in terms of the chemical reaction between oxygen or deuterium ions and the excess elements under the bombarding ions.
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