Abstract
The crucible design having a stepped wall was introduced for increasing the growth rate of SiC crystal without metal addition in top-seeded solution growth (TSSG) method. The numerical simulation confirmed that new crucible design to increase the solvent-crucible interface could definitely change the temperature distribution and increase the carbon concentration. The simulation result, SiC single crystals were grown with Si solvent at 1900°C using a normal crucible and a stepped crucible to investigate the effect of crucible design having a stepped wall. Grown SiC layers were analyzed using Optical microscopy and Raman spectra. The growth rate in the stepped crucible was finally 66um/h observed.
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