Abstract
Abstract Investigation into the effect of X-ray irradiation on gate oxide of MOS capacitor structures as well as hot-electron induced instability on 0.5μm p-channel MOSFET's is presented in this paper. The damage caused to the gate oxide by SR X-ray lithography includes the generation of interface states, positive oxide charge, and neutral traps. If the aluminium metallisation layer is patterned, the maximum anneal temperature is 450°C. This forming gas anneal returns the flatband voltage to within 30mV of its original value but does not seem to completely remove the shift. This suggests that a residual positive oxide charge remains in the oxide. In gate oxide defect density we found no differences between irradiated wafers having undergone a forming gas anneal and the not irradiated reference wafers. P-channel MOSFET's patterned using X-ray lithography have been stressed and show similar electrical parameter as ebeam devices, processed in the same way.
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