Abstract
SnO2-doped PLZT (9/65/35) transparent ceramics have been prepared by the hot press sintering method. The microstructure, dielectric, ferroelectric, and electrostrictive properties of the materials were examined and analyzed. All the samples present typical relaxor ferroelectric characteristics. Owing to the lowering of the long-range order by Sn4+ doping, the Tm peaks decrease gradually with the increasing SnO2 content. Compared with the high field-induced strains, the antiferroelectric-ferroelectric phase transformation in all the PLZST samples can be induced under the electric field. The electrostrictive property of the PLZT (9/65/35) ceramics was obviously improved by the Sn4+ ion doping. In addition, the polarization-related electrostrictive coefficient Q33 increased gradually from 0.024 m4/C2 to 0.027 m4/C2 as the SnO2 content increased from 0.0 wt % to 0.6 wt %.
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