Abstract
In this study, preparation of Sn and Si co-doped (0–3 mol% Sn and Si) ZnO dip-coated thin films on a glass substrate via the sol–gel process have been investigated. The effects of Sn and Si content on the structural and optical properties of applied thin films have been studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. XRD patterns showed a decrease in peak intensities of zinc oxide crystalline phase which is the result of increasing the Sn and Si co-dopant. The optical band gaps of the films were calculated. This suggests that the absorption edge shifts to higher wavelengths with Sn and Si dopant. The optical absorption spectrum indicates that the ZnO thin films have a direct band gap of 3.41 eV. But the optical band gap of the doped ZnO was found to be 2.64-3.35 eV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
