The effect of small amounts of silicon on the oxidation of high-purity Co-25 wt. % Cr at elevated temperatures

Abstract

Some investigators have reported that Co-25 wt.% Cr oxidizes slowly at temperatures in the range 1000–1200°C forming a protective Cr2O3 scale; and this is the normal behavior of cobalt-base superalloys. Others have reported very rapid oxidation, forming a two-layer scale: an outer CoO layer and an inner mixture of Cr2O3 and CoCr2O4 particles in a CoO matrix. This investigation shows that the principal reason for this behavior is the purity of the material; it appears that the rapid mode of oxidation is the intrinsic behavior for high purity material. The most probable impurity to produce the slower mode is silicon, and it is shown that as little as 0.05 wt. % Si is sufficient to change the mode of oxidation provided sufficient oxygen is also present in the alloy: it seems probable therefore that a fine dispersion of SiO2 is responsible.