Abstract
The hole transport buffer layer (HTL) known as PEDOT:PSS is found to be sensitive to polar solvents often used in the preparation of solution-processed perovskite-based solar cell. We employed \(\hbox {CH}_{3}\,\hbox {NH}_{3}\,\hbox {PbI}_{3}\) perovskite absorber sandwiched between two charge transport layers to analyze the effect of precursor solvent. By introducing skin-depth interfacial defect layer (IDL) on PEDOT:PSS film we studied the overall performance of the devices using one-dimensional device simulator. Both enhanced conductivity and variations in valence band offset (VBO) of IDL were considered to analyze device performance. A power conversion efficiency (PCE) of the devices was found to grow by 35 % due to increased conductivity of IDL by a factor of 1000. Furthermore, we noted a drastic reduction in PCE of the device by reducing the work function of IDL by more than 0.3eV . The thickness of interfacial defect layer was also analyzed and found to decrease the PCE of the devices by 18 % for fourfold increase in IDL thickness. The analysis was remarkably reproduced the experimentally generated device parameters and will help to understand the underlying physical process in perovskite-based solar cell.
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