Abstract
The effects of SiO2 addition, in the range 0–3 at. %, on the high field electrical characteristics of positive temperature coefficient of resistance (PTC) thermistors have been characterized at several temperatures above the ferroelectric transition temperature TC. It was found that decreases in SiO2 content and increases in measurement temperature both decreased the field dependency of the current-voltage response. The electrical data were analyzed in terms of existing current-flow models and found to exhibit reasonable agreement only with the model based on diffusion limited transport across a double Schottky barrier. The maximum value of voltage drop per grain boundary for fit to the diffusion limited model Vmax increased with increasing measurement temperature within the PTC region, but leveled off beyond the temperature of maximum resistance. This behavior directly parallels the variation of electrostatic barrier height with temperature. A reduction in Vmax with increasing SiO2 content was observed and attributed to a concomitant reduction in electrostatic barrier height.
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