Abstract
Polycrystalline samples of Zn0.37Mn0.58Fe2.05O4 have been prepared by the solid state reaction method. The structural characterization of the samples indicated that 1523 K is the most proper temperature for obtaining a single phase spinel structure. The DC electrical conductivity measurement was carried out by a two-probe method. Temperature dependent of DC electrical conductivity increases with increase in temperature ensuring the semiconductor nature of the samples. The drift mobility was estimated and found to be temperature dependant. The electrical conduction mechanism in these samples change from hopping, in the low temperature range, to polaron hopping in the high temperature range. The portion of energy Δe anticipated in hopping was determined. It decreases with increasing the sintering time and temperature.
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