The effect of sintering temperature on some properties of Cu–SiC composite

Abstract

Copper matrix composites reinforced with 1 wt.%, 2 wt.%, 3 wt.% and 5 wt.% SiC particles were fabricated by powder metallurgy method. Cu and Cu–SiC powder mixtures were compacted with a compressive force of 280 MPa and sintered in an open atmospheric furnace at 900–950 °C for 2 h. Within the furnace compacted samples were embedding into the graphite powder. The presence of Cu and SiC components in composites was verified by XRD analysis. Optical and SEM studies showed that Cu–SiC composites have a uniform microstructure in which silicon carbide particles are distributed uniformly in the copper matrix. The results of the study on mechanical and electrical conductivity properties of Cu–SiC composites indicated that with increasing SiC content (wt.%), hardness increased, but relative density and electrical conductivity decreased. The highest electrical conductivity of 98.8% IACS and relative density of 98.2% were obtained for the Cu–1 wt.%SiC composite sintered at 900 °C and this temperature was defined as the optimum sintering temperature.