Abstract
The low-voltage operation of a dielectric-barrier-discharge (DBD) plasma actuator with a simple electric circuit has the potential to put it into industrial applications. However, there is an issue that the efficiency of the low-voltage operated DBD plasma actuator is lower than that of the high-voltage operated one. In this study, the characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), which are used in the electric circuit, are investigated with a focus on the on-state resistance. The on-state resistance of the SiC-MOSFET affects the rise time of the applied voltage in our experimental condition. The energy consumption by applying a pulse voltage to the DBD plasma actuator increases with increasing the on-state resistance. Flow visualization with particle image velocimetry measurement reveals that a DBD plasma actuator with the SiC-MOSFET whose on-state resistance is the lowest induces the highest velocity of the ionic wind. Also, low on-state resistance is preferable in terms of the thrust-to-power ratio. These findings contribute to the development of an optimal power supply for DBD plasma actuators for industrial applications.
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