The effect of series resistance on threshold voltage measurement techniques for fully depleted SOI MOSFETs

Abstract

Accurate measurement of the threshold voltage of fully depleted SOI MOSFETs is limited by the high values of series resistance that occur due to the thin film nature of the material. This work examines the effect of series resistance on three techniques, one of which was extended here for the first time for use with SOI MOSFETs. The new technique is particularly useful because it allows the extraction of the threshold voltage parameter corresponding to the most widely used SOI MOSFET model. The effect that series resistance has on the measured threshold voltage is discussed alongside the validity of extending bulk MOSFET measurement techniques for use with SOI MOSFETs. The new method is shown to be more accurate than the existing linear method for extracting the SOISPICE definition of threshold voltage.