Abstract
Memristors have attracted considerable attention as next-generation devices for logic and neuromorphic computing applications, owing to their high on/off current ratio, low power consumption, and high switching speed. Despite the various excellent characteristics of memristors, they suffer from unstable conductive filament-based switching when applied in real-world applications. To address this issue, the effects of Schottky barrier modulation on device performance, in terms of conduction and failure mechanisms of an Ag/WOx/p-Si memristor, were investigated in this study by varying the silicon (Si) doping concentration. Through the temperature analysis of I–V characteristics, different conduction mechanisms are observed according to the doping concentration and resistance state. Moreover, endurance failure with several doping concentrations is analyzed by using filament overgrowth phenomena. The results of this study are expected to help in the development of devices with characteristics suitable for application.
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