Abstract
MBE-grown highly strain multiple quantum wells of InGaAs(Sb) and InGaAsN(Sb) were investigated by room temperature photoluminescence(RT-PL) and high resolution x-ray diffraction(HRXRD). By adding dilute Sb on the highly strained InGaAs and InGaAsN MQWs, the RT-PL spectra exhibits significantly increased intensity and narrowed line-width. The X-Ray c4ffraction curve was obtained the better flat interface and less strain between QW and barrier layer. Studies reveal the role of Sb as surfactant in the growth of quaternary and quinary alloy.
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