The Effect of Rotating Magnetic Fields on the Growth of SiGe Using the Traveling Solvent Method

Abstract

The study deals with three-dimensional nu- merical simulations of fluid flow and heat transfer un- der the effect of a rotating magnetic field (RMF) dur- ing the growth of Ge0.98Si0.02 by the traveling solvent method (TSM). By using a RMF, an attempt is made to suppress buoyancy convection in the Ge0.98Si0.02 solu- tion zone in order to get high quality and homogeneity with a flat growth interface. The full steady-state Navier- Stokes equations, as well as the energy, mass transport and continuity equations, are solved numerically using the finite element method. Different magnetic field in- tensities (B=2, 4, 10, 15 and 22 mT) for different rota- tional speeds (2, 7 and 10 rpm) under uniform and non- uniform heater profile conditionsare considered. The re- sults show that the RMF has a marked effect on the sili- con concentrationnear thegrowthinterface, changingthe shape of the concentration profile from convex to nearly flat when the magnetic field intensity increases keyword: Silicon (Si), Germanium (Ge), Traveling solvent method (TSM), Rotating magnetic field (RMF), Growth interface, Dissolutioninterface.