The Effect of Reflecting Condition on the Secondary Defect Formation in Copper by Electron Irradiation

Abstract

Defect formation in copper by the electron irradiation has been studied at room temperature with a 3 MV-class electron microscope. The density of interstitial loops formed during electron irradiation strongly depends on the reflecting condition of the specimen and it decreases with increasing order of reflection. For example, the density at the symmetry position of the 111 systematic reflection is the highest compared with that at each Bragg position of the systematic reflections. The formation rate of primary defects at each position of the 111 systematic reflection has been estimated from the density of interstitial loops. The results show that the formation rate at the symmetry position is about 2.5 and 3 times larger than that at first and second Bragg positions, respectively.