Abstract

In order to overcome the serious problems posed by Cu ink, which include the strong tendency to the oxidation of Cu nanopowders, various reduction atmospheres were investigated. As a result, a resistivity of ∼4 μΩ cm was achieved in the Cu interconnectors sintered at 200 °C with a gaseous mixture of formic acid (HCOOH) and alcohol. As regards this sample, micrographs show the facet boundaries and an average grain size of ∼300 nm. The use of formic acid was an effective way to decrease the sintering temperature to 150 °C, at which temperature the resistivity was ∼72 μΩ cm. This low temperature sintering and microstructural densification was due to the decomposition of capping molecules and the reduction in Cu oxide by formic acid.

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