Abstract

Well textured GdBa2Cu3O7-δ single domain bulks have been prepared successfully. Based on these samples, dilute impurities doping for the enhancement of flux pinning has been investigated. To achieve the fine inclusion particles, except ball milling process, a possible recrystallization mechanism is proposed. BaTiO3 powder was synthesized as dopant. BaO2 doping and mixed BaO2 and TiO2 doping were performed as references. The recrystallization mechanism was studied by means of the evolution of flux pinning behaviors along the growth direction of the successfully textured single domain bulks. BaTiO3 retains a semi-melting state in the harsh ambient of the melting process. The state was assumed like a colloidal droplet, which can be divided into more than one smaller fragment by the anisotropic growth of matrix. This hypothesis was studied in the sample, which was grown at a lower initial growth temperature. The evolution of flux pinning behaviors along the c-axis shows a remarkable increase of the critical current density under low field together with the decreased peak effect. The increased low-field pinning strength is partially attributed to the recrystallization of the BaTiO3 doping related fine precipitations.

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